CEM 6188
Qg
Tota l Gate Charge
---
38.5
---
nC
VGS=10V, VDS=30V,
Qgs
Ga te-Source Cha rge
---
4.7
---
nC
I D=8A
Qgd
Ga te-Drain “Miller” Charge
---
10.3
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage3 VGS=0V,IS=8A,TJ=25℃
---
---
1.
V
IS
Conti nuous Source Current
---
---
---
8
A
Trr
Reverse Recovery Ti me
Qrr
Reverse Recovery Cha rge
TJ = 25°C, IF =8A
---
28
---
Ns
di/dt = 100A/μs(Note3)
---
40
---
Nc
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Typical Characteristics: (TC=25℃ unless otherwise noted)
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
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