CEP30N15L データシートの表示（PDF） - Unspecified
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CEP30N15L Datasheet PDF : 5 Pages
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Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
CEP30N15L
Features：
1) VDS=150V,ID=40A, RDS(ON)<45mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.
GDS
Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)
Symbol
VDS
VGS
ID
EAS
PD
IAR
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current- TC=25℃
Continuous Drain Current-TC=100℃
Single Pulse Avalanche Energy(note1)
Power Dissipation
Avalanche Current (note2)
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purpose,1/8”
from case for 5 seconds
Ratings
150
±20
40
29
310
140
40
-55-+175
300
Thermal Characteristics：
Symbol
Parameter
Max
RƟJC
Thermal Resistance,Junction to Case
1.07
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—1—
Units
V
V
A
mJ
W
A
℃
℃
Units
℃/W
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