CEPF640 データシートの表示（PDF） - Unspecified
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CEPF640 Datasheet PDF : 5 Pages
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Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
CEPF640
Features：
1) VDS=200V,ID=18A,RDS(ON)<165mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(TA=25℃ unless otherwise noted)
GDS
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain Current-TC=25℃G
ID
Continuous Drain Current-TC=100℃
EAS
IDM
IAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Drain Current - PulsedC
Avalanche Current C (L=10mH)
Power Dissipation,TC=25℃ B
Operating and Storage Junction Temperature Range
Ratings
200
±20
18
13
125
45
9.5
212
-55 to +150
Thermal Characteristics：
Symbol
Parameter
Max
RƟJC
Thermal Resistance,Junction to Case (Steady-State)
0.59
Units
V
V
A
mJ
A
A
W
℃
Units
℃/W
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