CEPF640 データシートの表示（PDF） - Unspecified

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CEPF640

N-Channel MOSFET uses advanced trench technology

Unspecified 

CEPF640

VSD

Source-Drain Diode Forward Voltage

ID=9A

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--- 1.45

V

trr

Body Diode Reverse Recovery Time

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60

80

ns

IF=18A dI/dt=500A/ μs

Qrr

Body Diode Reverse Recovery Charge

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800

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nC

Notes:

A: The value of RθJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance,

and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5%max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the

device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.

G. The maximum current rating is limited by bond-wires.

Typical Characteristics： (TA=25℃ unless otherwise noted)

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