KF2N60D データシートの表示（PDF） - KEC
部品番号
コンポーネント説明
メーカー
KF2N60D Datasheet PDF : 6 Pages
| |||
SEMICONDUCTOR
TECHNICAL DATA
KF2N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
·VDSS= 600V, ID= 2.0A
·RDS(ON)=4.4Ω(Max) @VGS = 10V
·Qg(typ) = 6.0nC
MAXIMUM RATING (Tc=25℃)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
Drain Current
@TC=25℃
@TC=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
Derate above 25℃
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
RATING
600
±30
2.0
1.2
4.0
60
2.3
4.5
40.3
0.32
150
-55～150
3.1
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/℃
℃
℃
℃/W
℃/W
KF2N60D
A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
1
2
3
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF2N60I
A
H
C
J
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
6.6 +_ 0.2
B
6.1 +_ 0.2
C
5.34 +_0.3
D
0.7 +_ 0.2
E
9.3 +_0.3
F
2.3+_ 0.2
G
0.76 +_ 0.1
H
2.3 +_ 0.1
J
0.5+_ 0.1
K
1.8 +_ 0.2
L
0.5 +_ 0.1
M
1.0 +_ 0.1
N 0.96 MAX
P
1.02 +_ 0.3
PIN CONNECTION
(KF2N60D/I)
D
IPAK(1)
G
S
2011. 9. 21
Revision No : 1
1/6
Share Link: 