KDD データシートの表示（PDF） - VBsemi Electronics Co.,Ltd
部品番号
コンポーネント説明
メーカー
KDD Datasheet PDF : 9 Pages
| |||
KDD
P-Channel 20 V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
0.041 at VGS = - 4.5 V
0.054 at VGS = - 2.5 V
0.100 at VGS = - 1.8 V
ID (A)a
-4
-4
-4
Qg (Typ.)
12.5 nC
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
- Cellular Phone
- DSC
- Portable Game Console
- MP3
- GPS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Limit
- 20
± 12
- 4a
-4
- 4a, b, c
- 4a, b, c
- 25
- 2.3
- 1.3b, c
2.8
1.8
1.6b, c
1.0b, c
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
RthJA
RthJF
Typical
60
34
Maximum
80
45
E-mail：China@VBsemi TEL:86-755-83251052
Unit
V
A
W
°C
Unit
°C/W
1
Share Link: 