KDD3680 データシートの表示（PDF） - TY Semiconductor

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KDD3680

100V N-Channel Power Trench MOSFET

TY Semiconductor 

SMD Type

TransistIoCrs

Electrical Characteristics Ta = 25

Parameter

Single Pulse Drain-Source Avalanche Energy

Maximum Drain-Source Avalanche Current

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate-Body Leakage, Forward

Gate-Body Leakage, Reverse

Gate Threshold Voltage

Gate Threshold Voltage Temperature

Coefficient

Static Drain-Source On-Resistance

On-State Drain Current

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Maximum Continuous Drain-Source Diode

Forward Current

Drain-Source Diode Forward Voltage

Product specification

KDD3680

Symbol

WDSS

IAR

BVDSS

Testconditons

VDD = 50 V, ID = 6.1A (Not 1)

( Not 1)

VGS = 0 V, ID = 250 A

ID = 250 A, Referenced to 25

IDSS

IGSSF

IGSSR

VGS(th)

VDS = 80 V, VGS = 0 V

VGS = 20 V, VDS = 0 V

VGS = -20 V, VDS = 0 V

VDS = VGS, ID = 250 A

Min Typ Max Unit

245 mJ

6.1 A

100

V

-101

mV/

10

A

100 nA

-100 nA

2 2.4 4

V

ID = 250 A, Referenced to 25

-6.5

mV/

VGS = 10 V, ID = 6.1A

32 46

RDS(on) VGS = 10 V, ID = 6.1 A,TJ = 125

61 92 m

VGS = 6 V, ID =5.8 A,

34 51

ID(on) VGS = 10 V, VDS = 5 V

25

A

gFS

VDS = 5 V, ID = 6.1 A

25

S

Ciss

1735

pF

Coss

VDS = 50 V, VGS = 0 V,f = 1.0 MHz

176

pF

Crss

53

pF

td(on)

14 25 ns

tr

td(off)

VDD = 50 V, ID = 1 A,VGS = 10 V, RGEN

= 10

8.5 17 ns

63 94 ns

tf

21 34 ns

Qg

VDS = 50 V, ID = 6.1 A,VGS = 10 V

Qgs

(Note 2)

Qgd

38 53 nC

8.1

nC

9.2

nC

IS

2.9 A

VSD

VGS = 0 V, IS = 2.9 A (Not 2)

0.73 1.3 V

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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