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90N4F3 データシートの表示(PDF) - VBsemi Electronics Co.,Ltd

部品番号
コンポーネント説明
メーカー
90N4F3
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
90N4F3 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
90N4F3 TO252
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
350
280
210
140
Package Limited
70
0
0
25
50
75
100 125 150
TJ - Junction to Case (°C)
Current Derating*
400
350
300
250
200
150
100
50
0
0
www.VBsemi.tw
25
50
75
100 125 150
TJ - Junction to Case (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
E-mail:China@VBsemi TEL:86-755-83251052
5

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