STWA45N65M5 データシートの表示（PDF） - STMicroelectronics

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STWA45N65M5

N-channel 650 V, 35 A, 0.067 Ω typ., MDmesh™ V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages

STMicroelectronics 

STFW45N65M5, STW45N65M5, STWA45N65M5

1

Electrical ratings

Electrical ratings

Symbol

Table 2. Absolute maximum ratings

Value

Parameter

TO-247,

Unit

TO-3PF

TO-247 long leads

VGS Gate-source voltage

ID Drain current (continuous) at TC = 25 °C

ID Drain current (continuous) at TC = 100 °C

(1)

IDM Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

(2)

dv/dt Peak diode recovery voltage slope

(3)

dv/dt MOSFET dv/dt ruggedness

± 25

35

22

140

57

210

15

50

Insulation withstand voltage (RMS) from all three

VISO leads to external heat sink (t=1 s; Tc=25°C)

3500

Tstg Storage temperature

Tj Max. operating junction temperature

1. Limited by maximum junction temperature

2. ISD ≤ 35 A, di/dt ≤ 400 A/μs, VDS(Peak) < V(BR)DSS, VDD = 400 V

3. VDS < 520 V

- 55 to 150

150

V

A

A

A

W

V/ns

V/ns

V

°C

°C

Symbol

Table 3. Thermal data

Value

Parameter

TO-3PF

TO-247,

TO-247 long leads

Unit

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

2.2

0.6

°C/W

50

50

°C/W

Symbol

Table 4. Avalanche characteristics

Parameter

Value

Unit

Avalanche current, repetitive or not repetitive

IAR (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting tj=25°C,

Id= IAR; Vdd=50)

9

A

810

mJ

DocID024049 Rev 2

3/18

18

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