STWA45N65M5 データシートの表示（PDF） - STMicroelectronics

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STWA45N65M5

N-channel 650 V, 35 A, 0.067 Ω typ., MDmesh™ V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages

STMicroelectronics 

Electrical characteristics

STFW45N65M5, STW45N65M5, STWA45N65M5

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Symbol

Parameter

Table 5. On /off states

Test conditions

Drain-source

V(BR)DSS breakdown voltage

ID = 1 mA, VGS = 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

VDS = 650 V

drain current (VGS = 0) VDS = 650 V, TC=125 °C

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

Gate threshold voltage VDS = VGS, ID = 250 μA

Static drain-source

on-resistance

VGS = 10 V, ID = 17.5 A

Min. Typ. Max. Unit

650

V

1 μA

100 μA

± 100 nA

3

4

5V

0.067 0.078 Ω

Symbol

Parameter

Table 6. Dynamic

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

- 3470 - pF

-

82

- pF

-

7

- pF

(1)

Co(tr)

Equivalent

capacitance time

related

Equivalent

(2)

Co(er) capacitance energy

related

VDS = 0 to 520 V, VGS = 0

- 280 - pF

-

79

- pF

Intrinsic gate

RG resistance

f = 1 MHz open drain

-

2

-

Ω

Qg Total gate charge

VDD = 520 V, ID = 17.5 A,

Qgs Gate-source charge VGS = 10 V

Qgd Gate-drain charge

(see Figure 18)

-

82

- nC

- 18.5 - nC

-

35

- nC

1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

4/18

DocID024049 Rev 2

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