P0260EIS データシートの表示（PDF） - Unspecified

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P0260EIS

N-Channel Enhancement Mode MOSFET

Unspecified 

P0260EIS

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

600V

4.4Ω @VGS = 10V

2A

TO-251(IS)

1.GATE

2.DRAIN

3.SOURCE

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

Drain-Source Voltage

VDS

600

Gate-Source Voltage

VGS

±30

Continuous Drain Current2

Pulsed Drain Current1,2

Avalanche Current3

Avalanche Energy3

TC = 25 °C

ID

2

TC = 100 °C

1.4

IDM

8

IAS

2

EAS

20

Power Dissipation

TC = 25 °C

PD

56

TC = 100 °C

22

Operating Junction & Storage Temperature Range

TJ, TSTG

-55 to 150

UNITS

V

A

mJ

W

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

1Pulse width limited by maximum junction temperature.

2Limited only by maximum temperature allowed

3VDD = 50V , L = 10mH ,starting TJ = 25˚C

SYMBOL

RqJC

RqJA

TYPICAL

MAXIMUM

2.2

62.5

UNITS

°C / W

REV 1.1

1

2015/6/30

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