P0260EI データシートの表示（PDF） - Unspecified
部品番号
コンポーネント説明
メーカー
P0260EI Datasheet PDF : 8 Pages
| |||
P0260EI
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
600
2 3.1 4
±100
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 600V, VGS = 0V, TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °
C
VGS = 10V, ID = 1A
VDS = 15V, ID = 2A
1
10
3.5 4.4
4
DYNAMIC
Input Capacitance
Ciss
322
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
39
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 480V, ID = 2A,VGS= 10V
VDD = 300V, ID = 2A,
VGS = 10V, RG = 25Ω
7
10.4
1.7
4.4
28
60
58
66
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
2
Forward Voltage1
VSD
IF = 2A, VGS = 0V
1.5
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 2A, dlF/dt = 100A / mS
285
1.2
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
UNITS
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.1
2
2015/7/14
Share Link: 