P0170AI データシートの表示（PDF） - Unspecified
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P0170AI Datasheet PDF : 5 Pages
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P0170AI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
700V
15Ω @VGS = 10V
1A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
700
Gate-Source Voltage
VGS
±30
Continuous Drain Current2
Pulsed Drain Current1, 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
ID
1
TC = 100 °C
0.6
IDM
3
IAS
0.9
L = 10mH
EAS
4
Power DissipationA
TC = 25 °C
PD
TC = 100 °C
27.6
11
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , Starting TJ = 25 °C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
4.53
110
UNITS
°C / W
Ver 1.0
1
2012/4/16
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