P0170AI データシートの表示（PDF） - Unspecified

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P0170AI

N-Channel Enhancement Mode MOSFET

Unspecified 

P0170AI

N-Channel Enhancement Mode MOSFET

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage V(BR)DSS

VGS = 0V, ID = 250mA

700

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250mA

2.5 3.6 4.5

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±30V

±250

Zero Gate Voltage Drain Current

IDSS

VDS = 700V, VGS = 0V , TC = 25 °C

VDS = 560V, VGS = 0V , TC = 100 °C

1

10

Drain-Source On-State

Resistance1

RDS(ON)

VGS = 10V, ID = 0.5A

10.7 15

Forward Transconductance1

gfs

VDS = 10V, ID = 0.5A

1

DYNAMIC

Input Capacitance

Ciss

166

Output Capacitance

Coss

VGS = 0V, VDS = 25V, f = 1MHz

57

Reverse Transfer Capacitance

Crss

3

Total Gate Charge2

Qg

3.2

Gate-Source Charge2

Qgs

VDD = 560V, ID = 1A, VGS = 10V

1

Gate-Drain Charge2

Qgd

1

Turn-On Delay Time2

td(on)

12

Rise Time2

Turn-Off Delay Time2

tr

td(off)

VDD = 350V, ID = 1A, RG= 25Ω

50

20

Fall Time2

tf

30

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current3

IS

1

Forward Voltage1

VSD

IF = 1A, VGS = 0V

1.4

Reverse Recovery Time

Reverse Recovery Charge

trr

Qrr

IF = 1A, dlF/dt = 100A / mS VGS = 0V

200

0.31

1Pulse test : Pulse Width  300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

UNIT

V

nA

mA

Ω

S

pF

nC

nS

A

V

nS

nC

Ver 1.0

2

2012/4/16

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