P0550BT データシートの表示（PDF） - Unspecified

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P0550BT

N-Channel Enhancement Mode MOSFET

Unspecified 

P0550BT

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage V(BR)DSS

VGS = 0V, ID = 250mA

500

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250mA

2.5

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±30V

Gate Voltage Drain Current

IDSS

VDS = 500V, VGS = 0V, TJ = 25 °C

VDS = 400V, VGS = 0V , TJ = 100 °C

Drain-Source On-State

RDS(ON)

VGS = 10V, ID = 2.25A

Forward Transconductance1

gfs

VDS = 10V, ID = 2.25A

4.5

±100

25

250

1.75

4

DYNAMIC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge2

Gate-Source Charge2

Gate-Drain Charge2

Turn-On Delay Time2

Rise Time2

Turn-Off Delay Time2

Fall Time2

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

VGS = 0V, VDS = 25V, f = 1MHz

VDS = 400V, VGS = 10V, ID = 4.5A

VDD = 250V, ID = 4.5A, RG = 25Ω

691

93

12

12.1

3.7

3.6

13

22

28

20

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current3

IS

4.5

Forward Voltage1

VSD

IF = 4.5A, VGS = 0V

1.5

Reverse Recovery Time

Reverse Recovery Charge

trr

Qrr

IF = 4.5A , dlF/dt = 100A / μS

1450

10

1Pulse test : Pulse Width  300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3 Limited only by maximum temperature allowed.

UNIT

V

nA

mA

Ω

S

pF

nC

nS

A

V

nS

μC

Ver 1.0

2

2012/4/16

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