P0510AT データシートの表示（PDF） - Unspecified
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P0510AT Datasheet PDF : 8 Pages
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P0510AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
100
V
2
3
4
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 15A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
4.4 7.5
mΩ
4 5.5
50
S
DYNAMIC
Input Capacitance
Ciss
6716
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
851
pF
Reverse Transfer Capacitance
Crss
555
Gate Resistance
Rg
VGS = 0V, VDS = 0V, f = 1MHz
1
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=7V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V,ID = 20A
VDD = 50V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
146
113
nC
30
56
98
194
nS
170
88
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD
IF = 20A, VGS = 0V
143 A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dls/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
53
nS
98
nC
2Independent of operating temperature.
3Package limitation current is 111A.
REV 1.1
2
2018/5/16
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