P0465CS データシートの表示（PDF） - Unspecified

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P0465CS

N-Channel Enhancement Mode MOSFET

Unspecified 

P0465CS

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

650V

2.6mΩ @VGS = 10V

4A

TO-263

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

Drain-Source Voltage

VDS

650

Gate-Source Voltage

VGS

±30

Continuous Drain Current

Pulsed Drain Current1

Avalanche Current2

TC= 25 °C

TC= 100 °C

ID

4

2.5

IDM

15

IAS

2

Avalanche Energy2

EAS

20

Power Dissipation

TC= 25 °C

TC= 100°C

PD

71

28

Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

UNITS

V

V

A

mJ

W

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

1Pulse width limited by maximum junction temperature.

2 VDD=50V ,L=10mH,Starting Tj =25 °C.

SYMBOL

RqJC

TYPICAL

MAXIMUM UNITS

1.75

°C / W

REV 1.0

1

2014-3-20

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