IRFP21N60LPBF データシートの表示（PDF） - International Rectifier

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IRFP21N60LPBF

SMPS MOSFET

International Rectifier 

SMPS MOSFET

PD - 95478

Applications

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

• Lead-Free

IRFP21N60LPbF

HEXFET® Power MOSFET

VDSS RDS(on) typ. Trr typ. ID

600V 270mΩ 160ns 21A

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise immunity.

TO-247AC

Absolute Maximum Ratings

Parameter

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V

c ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

IDM

Pulsed Drain Current

PD @TC = 25°C Power Dissipation

Max.

21

13

84

330

Units

A

W

VGS

dv/dt

TJ

TSTG

Linear Derating Factor

d Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

2.6

±30

11

-55 to + 150

W/°C

V

V/ns

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Mounting torque, 6-32 or M3 screw

Diode Characteristics

1.1(10)

N•m (lbf•in)

Symbol

Parameter

Min. Typ. Max. Units Conditions

IS

Continuous Source Current

––– ––– 21

MOSFET symbol

D

(Body Diode)

A showing the

ISM

Ãc Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

––– ––– 84

––– ––– 1.5

integral reverse

G

f p-n junction diode.

S

V TJ = 25°C, IS = 21A, VGS = 0V

trr

Qrr

Reverse Recovery Time

Reverse Recovery Charge

–––

–––

–––

–––

160 240

400 610

480 730

1540 2310

ns

nC

TJ = 25°C, IF = 21A

f TJ = 125°C, di/dt = 100A/µs

f TJ = 25°C, IS = 21A, VGS = 0V

f TJ = 125°C, di/dt = 100A/µs

IRRM

Reverse Recovery Current

––– 5.3 7.9 A TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.irf.com

1

7/16/04

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