SI2328DS-T1-GE3 データシートの表示（PDF） - VBsemi Electronics Co.,Ltd

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SI2328DS-T1-GE3

N-Channel 100 V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

SI2328DS-T1-GE3

N-Channel 100 V (D-S) MOSFET

MOSFET PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)a

0.240 at VGS = 10 V

2.0

100

0.250 at VGS = 6 V

1.8

0.260 at VGS = 4.5 V

1.7

Qg (Typ.)

2.9 nC

G1

S2

3D

FEATURES

• TrenchFET® Power MOSFET

• 100 % Rg Tested

• 100 % UIS Tested

• Material categorization:

APPLICATIONS

• DC/DC Converters

• Load Switch

• LED Backlighting in LCD TVs

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ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

TC = 25 °C

Continuous Drain Current (TJ = 150 °C)

TC = 70 °C

TA = 25 °C

ID

TA = 70 °C

Pulsed Drain Current (t = 300 µs)

Continuous Source-Drain Diode Current

IDM

TC = 25 °C

TA = 25 °C

IS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

IAS

EAS

TC = 25 °C

Maximum Power Dissipation

TC = 70 °C

TA = 25 °C

PD

TA = 70 °C

Operating Junction and Storage Temperature Range

TJ, Tstg

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambientb, d

Maximum Junction-to-Foot (Drain)

5 s

Steady State

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 166 °C/W.

Symbol

RthJA

RthJF

Typical

75

40

Limit

100

± 20

2

1.8

1.6b, c

1.3b, c

7

2.1

1.0b, c

5

1.25

2.5

1.6

1.25b, c

0.8b, c

- 55 to 150

Maximum

100

50

Unit

V

A

mJ

W

°C

Unit

°C/W

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