DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SI2328DS-T1-GE3 データシートの表示(PDF) - VBsemi Electronics Co.,Ltd

部品番号
コンポーネント説明
メーカー
SI2328DS-T1-GE3
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
SI2328DS-T1-GE3 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SI2328DS-T1-GE3
A = 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
www.VBsemi.tw
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
10-3
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Note
Normalized Thermal Transient Impedance, Junction-to-Foot
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C )
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
E-mail:China@VBsemi TEL:86-755-83251052
6

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]