SI2333CDS-T1-GE3(2009) データシートの表示（PDF） - Vishay Semiconductors
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SI2333CDS-T1-GE3 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
2.0
VGS = 5 V thru 2.5 V
VGS = 2 V
15
1.5
10
5
0
0.0
0.10
VGS = 1.5 V
VGS = 1 V
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.0
0.5
0.0
0.0
2400
Si2333CDS
Vishay Siliconix
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.08
0.06
0.04
0.02
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0.00
0
5
10
15
20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
ID = 5.1 A
6
VDS = 3 V
VDS = 6 V
4
VDS = 9 V
2
1800
Ciss
1200
600
Crss
Coss
0
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
ID = 5.1 A
1.4
VGS = 2.5 V
1.2
VGS = 4.5 V
1.0
0.8
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68717
S09-2433-Rev. C, 16-Nov-09
www.vishay.com
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