SI2333DS-T1-E3 データシートの表示（PDF） - Vishay Semiconductors
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SI2333DS-T1-E3 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Si2333DS
Vishay Siliconix
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 3
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72023.
Document Number: 72023
S09-0130-Rev. C, 02-Feb-09
www.vishay.com
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