SI2338DS-T1-GE3 データシートの表示（PDF） - VBsemi Electronics Co.,Ltd
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SI2338DS-T1-GE3 Datasheet PDF : 9 Pages
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Si2338DS-T1-GE3
N-Channel 30-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = 10 V
30
0.033 at VGS = 4.5 V
ID (A)a
6.5
6.0
Qg (Typ.)
4.5 nC
TO-236
(SOT-23)
G1
S2
3D
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
6.5a
6.0
5.3
5.0
25
1.4
0.9b, c
1.7
1.1
1.1b, c
0.7b, c
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
Symbol
RthJA
RthJF
Typical
90
60
Maximum
115
75
Unit
V
A
W
°C
Unit
°C/W
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