SI2338DS-T1-GE3 データシートの表示（PDF） - Vishay Semiconductors
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SI2338DS-T1-GE3 Datasheet PDF : 9 Pages
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Si2338DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
SOT-23 (TO-236)
D
3
Marking code: E8
1
G
Top View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A) a, e
Configuration
2
S
30
0.028
0.033
4.2
6
Single
FEATURES
• TrenchFET® power MOSFET
• Low on-resistance
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converters, high speed switching
D
(3)
G
(1)
(2)
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
SOT-23
Si2338DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 300 μs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum power dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
30
± 20
6e
6e
5.5 b, c
4.4 b, c
25
2.1
1.1 b, c
2.5
1.6
1.3 b, c
0.8 b, c
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, d
t5s
Maximum junction-to-foot (drain)
Steady state
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 166 °C/W
e. Package limited
SYMBOL
RthJA
RthJF
TYPICAL
75
40
MAXIMUM
100
50
UNIT
°C/W
S11-0864-Rev. A, 02-May-11
1
Document Number: 67877
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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