SI3434DV(2001) データシートの表示（PDF） - Vishay Semiconductors
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SI3434DV Datasheet PDF : 4 Pages
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Si3434DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.30
50
Single Pulse Power
0.15
40
ID = 1 mA
0.00
30
–0.15
20
–0.30
10
–0.45
–0.60
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
10–3
10–2
10–1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
Square Wave Pulse Duration (sec)
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4
Document Number: 71610
S-03617—Rev. A, 17-Apr-01
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