SI4688DY-T1-E3 データシートの表示（PDF） - Vishay Semiconductors
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SI4688DY-T1-E3 Datasheet PDF : 6 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
2000
0.016
0.012
0.008
VGS = 4.5 V
VGS = 10 V
1600
1200
800
Si4688DY
Vishay Siliconix
Ciss
0.004
0.000
0
5
10
15
20
25
30
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 15 V
ID = 12 A
8
400
Crss
Coss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V
ID = 12 A
1.4
6
1.2
4
1.0
2
0.8
0
0
30
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
TJ = 150 °C
10
0.04
0.03
ID = 12 A
TJ = 25 °C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 69996
S09-0394-Rev. B, 09-Mar-09
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
www.vishay.com
3
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