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SI4599DY

N-Chanel and P-Channel MOSFET use advanced trench technology

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Si4599DY

Description：

This N-Chanel and P-Channel MOSFET use advanced trench technology

to provide excellent RDS(ON), low gate charge. This device may be used

to form a level shifted high side switch, and for a host of other application.

Features：

N-Channel: VDS=40V,ID=6.7A,RDS(ON)<32mΩ@VGS=10V

P-Channel: VDS=-40V,ID=-7.2A,RDS(ON)<40mΩ@VGS=-10V

1) High Power and current handing capability.

2) Lead free product is acquired.

3) Surface Mount Package.

S1

G1

S2

G2

D1

D1

D2

D2

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

VDS

VGS

ID

IDM (pluse)

PD

TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Continuous@ Current-Pulsed1

Power Dissipation

Operating and Storage Junction Temperature Range

N-Channel

40

±20

6.7

26.8

2.5

-55 to +150

P-Channel

-40

±20

-7.2

-28.8

2.5

-55 to +150

Units

V

V

A

W

℃

Thermal Characteristics：

Channel

Symbol

Parameter

Max

N

RƟJA

Thermal Resistance,Junction to Ambient

62

P

RƟJA

Thermal Resistance,Junction to Ambient

62

Units

℃/W

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