SI4599DY データシートの表示（PDF） - Unspecified
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SI4599DY Datasheet PDF : 5 Pages
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Si4599DY
P-Channel Electrical Characteristics：(TC=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
ON/Off States
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=-250μA
-40
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-40V
---
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
On Characteristics3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=-250μA
-1
RDS(ON)
Drain-Source On Resistance2
VGS=-10V,ID=-4A
---
GFS
Forward Transconductance
VDS=-10V, ID=-3A
---
Dynamic Characteristics
Ciss
Input Capacitance
---
Coss
Output Capacitance
VDS=-15V, VGS=0V, f=1MHz ---
Crss
Reverse Transfer Capacitance
---
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time2.3
---
Rise Time2.3
Turn-Off Delay Time2.3
VDS=-20V,V GS=-4.5V,
---
RGEN=25Ω. ID=-1A
---
Fall Time2.3
---
Total Gate Charge2.3
---
Gate-Source Charge2.3
VGS=-4.5V, VDS=-20V,
---
ID=-2A
Gate-Drain “Miller” Charge2.3
---
Drain-Source Diode Characteristics
VSD
LS
LSM
Notes:
Source-Drain Diode Forward Voltage3
Continuous Source Current
Pulsed Source Current
VGS=0V,IS=-1A
---
VG=VD=0V , Force Current
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
Typ Max Units
---
---
V
---
-1
μA
--- ±100 nA
-1.6 -2.5
V
32
40
mΩ
5
--
S
1050 1600
110 160
pF
80
120
20
40
ns
12
24
ns
46
80
ns
6
12
ns
8
16
nC
2.1
4.2
nC
3.6
7.2
nC
--
-1
V
---
-7.2
A
---
-14.4
A
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