SI4559EY-T1-E3 データシートの表示（PDF） - VBsemi Electronics Co.,Ltd
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SI4559EY-T1-E3 Datasheet PDF : 14 Pages
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SI4559EY-T1-E3
www.VBsemi.tw
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 60 V, VGS = 0 V
VDS = - 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55 °C
VDS = - 60 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VDS ≤ - 5 V, VGS = - 10 V
VGS = 10 V, ID = 4.3 A
VGS = - 10 V, ID = - 3.1 A
VGS = 4.5 V, ID = 3.9 A
VGS = - 4.5 V, ID = - 0.2 A
VDS = 15 V, ID = 4.3 A
VDS = - 15 V, ID = - 3.1 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 30 V, VGS = 10 V, ID = 4.3 A
Qg
VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A
N-Channel
VDS = 30 V, VGS = 4.5 V, ID = 4.3 A
Qgs
P-Channel
Qgd
VDS = - 30 V, VGS = - 4.5 V, ID = - 3.1 A
Gate Resistance
Rg
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
60
- 60
1
-1
20
- 25
Typ.a Max.
55
- 50
-6
4
3
-3
100
- 100
1
-1
10
- 10
0.026
0.055
0.029
0.060
15
8.5
0.028
0.060
0.035
0.070
665
650
75
95
40
60
13
20
14.5 22
6
9
8
12
2.3
2.2
2.6
3.7
2
3
14
20
Unit
V
mV
V
nA
µA
A
Ω
S
pF
nC
Ω
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