SI4559EY-T1-E3 データシートの表示（PDF） - VBsemi Electronics Co.,Ltd
部品番号
コンポーネント説明
メーカー
SI4559EY-T1-E3 Datasheet PDF : 14 Pages
| |||
SI4559EY-T1-E3
www.VBsemi.tw
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min. Typ.a Max. Unit
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 30 V, RL = 8.8 Ω
ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
15
25
30
45
65 100
70 105
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
td(off)
tf
td(on)
tr
P-Channel
VDD = - 30 V, RL = 12.5 Ω
ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω
N-Channel
VDD = 30 V, RL = 8.8 Ω
ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
15
25
40
60
10
15
30
45
ns
10
15
10
15
15
25
13
20
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 30 V, RL = 12.5 Ω
ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
20
30
35
55
10
15
30
45
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
TC = 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
2.6
- 2.8
A
20
- 25
Body Diode Voltage
VSD
IS = 1.7 A
IS = - 2 A
N-Ch
P-Ch
0.8 1.2
V
- 0.8 - 1.2
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
N-Ch
trr
P-Ch
Qrr
N-Channel
N-Ch
IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C P-Ch
30
60
ns
30
50
32
50
nC
35
60
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta
P-Channel
N-Ch
IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C P-Ch
25
16
ns
tb
N-Ch
5
P-Ch
14
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
E-mail：China@VBsemi TEL:86-755-83251052
3
Share Link: 