SI4559EY-T1-E3 データシートの表示（PDF） - VBsemi Electronics Co.,Ltd
部品番号
コンポーネント説明
メーカー
SI4559EY-T1-E3 Datasheet PDF : 14 Pages
| |||
SI4559EY-T1-E3
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
25
VGS = 10 thru 5 V
20
20
www.VBsemi.tw
15
4V
10
5
3V
0
012345678
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0
VGS = 4.5 V
VGS = 10 V
5
10
15
20
25
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 30 V
ID = 3.1 A
8
6
4
2
0
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
Gate Charge
15
10
TC = 125 °C
5
25 °C
- 55 °C
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
800
Ciss
600
400
200
Coss
0 Crss
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
2.2
VGS = 10 V
2.0 ID = 3.1 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
E-mail：China@VBsemi TEL:86-755-83251052
8
Share Link: 