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SI4559ADY

N-Chanel and P-Channel MOSFET use advanced trench technology

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Si4559ADY

Description：

This N-Chanel and P-Channel MOSFET use advanced trench technology

to provide excellent RDS(ON), low gate charge. This device may be used

to form a level shifted high side switch, and for a host of other application.

Features：

N-Channel: VDS=60V,ID=4.5A,RDS(ON)<40mΩ@VGS=10V

P-Channel: VDS=-60V,ID=-4.1A,RDS(ON)<90mΩ@VGS=-10V

1) High Power and current handing capability.

2) Lead free product is acquired.

3) Surface Mount Package.

S1

G1

S2

G2

D1

D1

D2

D2

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

Parameter

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

Drain Current-Continuous @TA=25℃1

ID

Drain Current-Continuous @TA=70℃1

IDM

Pulsed Drain Current-2

EAS

Single Pulse Avalanche Energy3

IAS

PD

TJ, TSTG

Avalanche Current

Power Dissipation4

Operating and Storage Junction Temperature Range

Thermal Characteristics：

N-Channel

60

±20

4.5

3.5

18

22

21

1.5

-55 to +150

P-Channel

-60

±20

-4.1

-3.2

-14

29.7

24.2

1.5

-55 to +150

Units

V

V

A

mJ

A

W

℃

Symbol

RƟJA

RƟJAC

Parameter

Thermal Resistance,Junction to Ambient1

Thermal Resistance,Junction Case1

N-Channel Max

85

25

P-Channel Max Units

85

℃/W

25

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