SI4542DY-T1-E3 データシートの表示（PDF） - VBsemi Electronics Co.,Ltd
部品番号
コンポーネント説明
メーカー
SI4542DY-T1-E3 Datasheet PDF : 14 Pages
| |||
SI4542DY-T1-E3
N- and P-Channel 30 V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
N-Channel 30
P-Channel - 30
RDS(on) (Ω)
ID (A)a
0.018 at VGS = 10 V
8e
0.020 at VGS = 8 V
8e
0.024 at VGS = 4.5 V 8e
0.032 at VGS = - 10 V - 8e
0.034 at VGS = - 8 V - 8e
0.040 at VGS = - 4.5 V - 7.5
Qg (Typ.)
6.2
18.5
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Motor Drive
• Mobile Power Bank
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
D1
G1
S1
S2
G2
D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
TC = 25 °C
TA = 25 °C
IS
ISM
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
30
± 20
8e
6.8
6.8b, c
5.4b, c
40
2.6
1.6b, c
40
10
5
3.1
2
2b, c
- 30
± 20
- 8e
- 6.8
- 6.6b, c
- 5.3b, c
- 40
- 2.6
- 1.6b, c
- 40
- 20
20
3.2
2.1
2b, c
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
1.28b, c
1.28b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
Typ. Max.
Maximum Junction-to-Ambientb, d
t ≤ 10 s
RthJA
50
62.5
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30
40
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel).
e. Package limited.
P-Channel
Typ. Max.
47
62.5
29
38
Unit
V
A
mJ
W
°C
Unit
°C/W
E-mail：China@VBsemi TEL:86-755-83251052
1
Share Link: 