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SI4542DY-T1-E3 データシートの表示(PDF) - VBsemi Electronics Co.,Ltd

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SI4542DY-T1-E3
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
SI4542DY-T1-E3 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SI4542DY-T1-E3
www.VBsemi.tw
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA
ID = - 250 µA
ID = 250 µA
ID = - 250 µA
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 12 V
VDS = 0 V, VGS = ± 12 V
VDS = 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VDS = - 5 V, VGS = - 10 V
VGS = 10 V, ID = 6.8 A
VGS = - 10 V, ID = - 8 A
VGS = 8 V, ID = 6.7 A
VGS = - 8 V, ID = - 6.5 A
VGS = 4.5 V, ID = 6.6 A
VGS = - 4.5 V, ID = - 5 A
VDS = 15 V, ID = 6.8 A
VDS = - 15 V, ID = - 6.7 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 20 V, VGS = 10 V, ID = 10 A
Qg
VDS = - 20 V, VGS = - 10 V, ID = - 10 A
N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 10 A
Qgs
P-Channel
Qgd
VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A
Gate Resistance
Rg
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
30
- 30
1.0
- 1.0
20
- 20
0.3
1.2
Typ.a Max. Unit
V
40
- 34
- 4.1
5
mV/°C
2.0
V
- 2.0
± 100
nA
± 100
1
-1
µA
10
- 10
A
0.018
0.040
0.020
Ω
0.044
0.024
0.050
27
S
25
510
620
95
pF
115
33
57
6
10
41.5 63
5.8
7
16
22
nC
1.6
4.3
1.4
7
1.1 2.3
Ω
5.7
9.6
E-mail:China@VBsemi TEL:86-755-83251052
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