SI4477DY(2012) データシートの表示（PDF） - Vishay Semiconductors
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SI4477DY Datasheet PDF : 4 Pages
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SPICE Device Model Si4477DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
SIMULATED MEASURED
DATA
DATA
Static
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 μA
0.60
-
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
RDS(on)
gfs
VSD
VGS = - 4.5 V, ID = - 18 A
VGS = - 2.5 V, ID = - 14 A
VDS = - 10 V, ID = - 3.5 A
IS = - 5 A
0.0068
0.0085
16
- 0.69
0.0051
0.0085
10
- 0.75
Input Capacitance
Ciss
4500
4600
Output Capacitance
Coss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
1010
980
Reverse Transfer Capacitance
Total Gate Charge
Crss
436
175
Qg
VDS = - 10 V, VGS = - 10 V, ID = - 18 A
99
44
125
59
Gate-Source Charge
Qgs
VDS = - 10 V, VGS = - 4.5 V, ID = - 18 A
10
10
Gate-Drain Charge
Qgd
19
19
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
UNIT
V
S
V
pF
nC
S12-2601-Rev. B, 05-Nov-12
2
Document Number: 65215
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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