ME4946 データシートの表示（PDF） - Unspecified

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ME4946

Dual N-Channel 60-V (D-S) MOSFET

Unspecified 

Dual N-Channel 60-V (D-S) MOSFET

GENERAL DESCRIPTION

The ME4946 is the Dual N-Channel logic enhancement mode power

field effect transistors are produced using high cell density, DMOS

trench technology. This high density process is especially tailored to

minimize on-state resistance. These devices are particularly suited

for low voltage application such as cellular phone and notebook

computer power management and other battery powered circuits

where high-side switching and low in-line power loss are needed in a

very small outline surface mount package.

ME4946

FEATURES

● RDS(ON)≦41mΩ@VGS=10V

● RDS(ON)≦52mΩ@VGS=4.5V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current

capability

APPLICATIONS

● Power Management

● DC/DC Converter

● LCD TV & Monitor Display inverter

● CCFL inverter

PIN CONFIGURATION

(SOP-8)

Top View

Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current(Tj=150℃)

Pulsed Drain Current

TA=25℃

TA=70℃

Continuous Source-Drain Diode Current

Avalanche Current

Single-Pulse Avalanche Energy

L=0.1mH

Maximum Power Dissipation

TA=25℃

TA=70℃

Operating Junction & Storage Temperature Range

Thermal Resistance-Junction to Ambient *

Thermal Resistance-Junction to Case *

Symbol

VDSS

VGSS

ID

IDM

IS

IAS

EAS

PD

TJ

RθJA

RθJC

10 secs Steady State

60

±20

6.4

5

5.1

4

30

2

15

12

2.7

1.6

1.7

1

-55 to 150

46

76

43

*The device mounted on 1in2 FR4 board with 2 oz copper

Unit

V

A

mJ

W

℃

℃/W

July, 2008-Ver4.1

01

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