ME4946 データシートの表示（PDF） - VBsemi Electronics Co.,Ltd
部品番号
コンポーネント説明
メーカー
ME4946 Datasheet PDF : 9 Pages
| |||
ME4946
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance f
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VDS = 60 V
VDS = 60 V, TJ = 125 °C
VDS = 60 V, TJ = 175 °C
VGS = 10 V
VDS ≥ 5 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VGS = 4.5 V
ID = 4.5 A-
ID = 4.5 A, TJ = 125 °C
ID = 4.5 A, TJ = 175 °C
ID = 4 A-
VDS = 15 V, ID = 4.5 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 30 V, ID = 5.3 A
f = 1 MHz
VDD = 30 V, RL = 6.8 Ω
ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω
Pulsed Current a
ISM
Forward Voltage
VSD
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
IF = 2 A, VGS = 0 V
MIN.
60
1.5
-
-
-
-
20
-
-
-
-
-
-
-
-
-
1.3
-
-
-
-
-
-
www.VBsemi.tw
TYP. MAX. UNIT
-
-
V
2.0
2.5
-
± 100 nA
-
1
-
50
μA
-
150
-
-
A
0.028 0.040
-
0.066
Ω
-
0.081
0.030 0.055
15
-
S
600 750
110 140 pF
50
62
11.7 18
1.8
2.7
nC
2.8
4.2
-
6
Ω
7
11
3.3
5
ns
22.4 33.5
2.1
3.2
-
28
A
0.75 1.1
V
E-mail：China@VBsemi TEL:86-755-83251052
2
Share Link: 