ME4946A データシートの表示（PDF） - VBsemi Electronics Co.,Ltd
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ME4946A Datasheet PDF : 9 Pages
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ME4946A
www.VBsemi.tw
Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A) per leg
Configuration
SO-8 Dual
D2
D2 5
D1 6
D1 7
8
60
0.040
0.055
7
Dual
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
D1
D2
G1
G2
4
3 G2
2 S2
1 G1
S1
Top View
S1
S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
60
± 20
7
4
3.6
28
18
16.2
4
1.3
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount c
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
SYMBOL
RthJA
RthJF
LIMIT
110
34
UNIT
V
A
mJ
W
°C
UNIT
°C/W
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