CRCW06031200FKTA データシートの表示（PDF） - NXP Semiconductors.
部品番号
コンポーネント説明
メーカー
CRCW06031200FKTA Datasheet PDF : 9 Pages
| |||
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (minimum)
Machine Model
M1 (minimum)
Charge Device Model
C5 (minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
Table 5. Electrical Characteristics for 24 V Application (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
40
—
870
MHz
Power Gain
50 MHz
870 MHz
Gp
—
18
—
dB
—
19
—
Slope
40 - 870 MHz
S
—
0.6
—
dB
Gain Flatness (40 - 870 MHz, Peak to Valley)
Input Return Loss (Zo = 75 Ohms)
f = 40 - 160 MHz
f = 161 - 450 MHz
f = 451 - 870 MHz
GF
—
0.5
—
dB
IRL
dB
—
21
—
—
19
—
22
—
Output Return Loss (Zo = 75 Ohms)
f = 40 - 400 MHz
f = 401 - 870 MHz
ORL
dB
—
22
—
—
17
—
Composite Second Order
(Vout = +44 dBmV/ch., Worst Case)
(Vout = +46 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
Cross Modulation Distortion @ Ch 2
(Vout = +44 dBmV/ch., FM = 55 MHz)
(Vout = +46 dBmV/ch., FM = 55 MHz)
(Vout = +48 dBmV/ch., FM = 55 MHz)
Composite Triple Beat
(Vout = +44 dBmV/ch., Worst Case)
(Vout = +46 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
Noise Figure
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
50 MHz
870 MHz
CSO132
—
CSO112
—
CSO79
—
XMD132
—
XMD112
—
XMD79
—
CTB132
—
CTB112
—
CTB79
—
NF
—
—
dBc
- 65
- 58
- 65
- 59
- 71
- 62
dBc
- 64
- 52
- 63
- 52
- 62
- 52
dBc
- 63
- 56
- 64
- 56
- 65
- 58
4
5.0
dB
4
5.0
DC Current (VDC = 24 V, TC = - 20° to +100°C)
IDC
230
250
265
mA
(continued)
MMG1001NT1
2
RF Device Data
Freescale Semiconductor
Share Link: 