CRCW06031200FKTA データシートの表示（PDF） - NXP Semiconductors.

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CRCW06031200FKTA

Gallium Arsenide CATV Integrated Amplifier Module

NXP Semiconductors. 

Table 5. Electrical Characteristics for 12 V Application (VCC = 12 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)

(continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Frequency Range

BW

40

—

870

MHz

Power Gain

50 MHz

870 MHz

Gp

—

18

—

dB

—

19

—

Slope

40 - 870 MHz

S

—

0.6

—

dB

Gain Flatness (40 - 870 MHz, Peak to Valley)

Input Return Loss (Zo = 75 Ohms)

f = 40 - 160 MHz

f = 161 - 450 MHz

f = 451 - 870 MHz

GF

—

0.5

—

dB

IRL

dB

—

21

—

—

19

—

19

—

Output Return Loss (Zo = 75 Ohms)

f = 40 - 400 MHz

f = 401 - 750 MHz

f = 751 - 870 MHz

ORL

dB

—

19

—

—

17

—

—

15

—

Composite Second Order

(Vout = +42 dBmV/ch., Worst Case)

(Vout = +42 dBmV/ch., Worst Case)

Cross Modulation Distortion @ Ch 2

(Vout = +42 dBmV/ch., FM = 55 MHz)

(Vout = +42 dBmV/ch., FM = 55 MHz)

Composite Triple Beat

(Vout = +42 dBmV/ch., Worst Case)

(Vout = +42 dBmV/ch., Worst Case)

Noise Figure

112 - Channel FLAT

79 - Channel FLAT

112 - Channel FLAT

79 - Channel FLAT

112 - Channel FLAT

79 - Channel FLAT

50 MHz

870 MHz

CSO112

—

CSO79

—

XMD112

—

XMD79

—

CTB112

—

CTB79

—

NF

—

—

dBc

- 65

—

- 71

—

dBc

- 63

—

- 62

—

dBc

- 64

—

- 65

—

4

5.0

dB

4

5.0

DC Current (VDC = 12 V, TC = - 20° to +100°C)

IDC

190

210

225

mA

RF Device Data

Freescale Semiconductor

MMG1001NT1

3

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