PJM2035PSA データシートの表示（PDF） - Unspecified
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PJM2035PSA Datasheet PDF : 6 Pages
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PJM2035PSA
Silicon P-Channel Power MOSFET
Electrical Characteristics (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Static Characteristics
Drain-source breakdown voltage
-V(BR)DSS
VGS = 0V, ID=-250µA
20
Zero gate voltage drain current
-IDSS
VDS =-20V,VGS = 0V
Gate-body leakage current
IGSS
VGS=±8V, VDS=0V
Gate threshold voltage Note1
-VGS(th)
VDS =VGS, ID =-250µA
0.4
Drain-source on-resistance Note1
RDS(on)
VGS =-4.5V, ID=-4A
VGS =-2.5V, ID=-4A
VGS =-1.8V, ID=-2A
Forward tranconductance Note1
gFS
VDS =-5V, ID=-4A
Dynamic characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
VDS =-10V,VGS =0V,f=1MHz
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDS=-10V, VGS=-4.5V RGEN =6Ω,
RL=10Ω, ID=-1A
Turn-off fall time
tf
Total gate charge
Qg
Gate-source charge
Qgs
VDS =-10V,VGS =-4.5V,ID =-4A
Gate-drain charge
Qgd
Source-Drain Diode characteristics
Diode Forward voltage Note1
-VDS
VGS =0V, IS=-1A
Notes:1. Pulse Test : Pulse width≦300µs, duty cycle≦2%.
Type
0.7
14
1610
157
145
16.8
12.4
94.1
42.4
15.4
2.5
3.3
Max
1
±10
1
35
45
62
1
Units
V
µA
µA
V
mΩ
S
pF
ns
nC
V
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Revision：1.0 Feb-2019
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