Feature
⚫ TrenchFET Power MOSFET
⚫ Excellent RDS(on) and Low Gate Charge
Applications
⚫ Load Switch for Portable Devices
⚫ DC/DC Converter
Absolute Maximum Ratings
Ratings at TA =25℃ unless otherwise specified.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Note1
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient Note2
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
Symbol
RθJA
PJM2300NSA
N-Channel MOSFET
SOT-23
1. Gate 2.Source 3.Drain
Marking: M02
Schematic diagram
3 Drain
1
Gate
2 Source
Maximum
20
±12
4.5
18
0.35
150, -55 to 150
Typ.
357
Units
V
V
A
W
°C
Units
°C/W
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Revision:1.0 Jan-2019