PJM2302NSA-S データシートの表示（PDF） - Unspecified
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PJM2302NSA-S Datasheet PDF : 6 Pages
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PJM2302NSA-S
N- Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25℃ unless otherwise noted
Parameter
Symbol
Condition
Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V ID=250μA
20
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
-
- ±100 nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.4 0.8 1.2
V
Drain-Source On-State Resistance Note3
RDS(ON)
VGS=2.5V, ID=1A
VGS=4.5V, ID=2A
-
60
80
mΩ
-
48
60
mΩ
Forward Transconductance Note3
gFS
VDS=5V,ID=2A
-
5
-
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
- 260
-
pF
VDS=10V,VGS=0V,
Coss
-
48
-
pF
f=1.0MHz
Crss
-
27
-
pF
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
- 2.5
-
nS
tr
VDD=10V, RL=3.3Ω
- 3.2
-
nS
td(off)
VGS=4.5V,RGEN=6Ω
- 21
-
nS
tf
-
3
-
nS
Qg
- 2.9
5
nC
VDS=10V,ID=2A,
Qgs
- 0.4
-
nC
VGS=4.5V
Qgd
- 0.6
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage Note 3
VSD
VGS=0V,IS=2A
-
-
1.2
V
Diode Forward Current Note 2
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
-
-
2
A
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Revision：1.1 Jun-2019
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