PJM3415PSA データシートの表示（PDF） - Unspecified
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PJM3415PSA Datasheet PDF : 6 Pages
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PJM3415PSA
Silicon P-Channel Power MOSFET
Electrical Characteristics (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Static Characteristics
Drain-source breakdown voltage
-V(BR)DSS
VGS = 0V, ID =-250µA
20
Zero gate voltage drain current
-IDSS
VDS =-16V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±8V, VDS = 0V
Gate threshold voltage Note2
-VGS(th)
VDS =VGS, ID =-250µA
0.3
Drain-source on-resistance Note2
RDS(on)
VGS =-4.5V, ID =-4A
VGS =-2.5V, ID =-4A
VGS =-1.8V, ID =-2A
Forward tranconductance Note2
gFS
VDS =-5V, ID =-4A
8
Dynamic characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
VDS =-10V,VGS =0V,f=1MHz
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDS=-10V, VGS=-4.5V RGEN =3Ω,
RL=2.5Ω,
Turn-off fall time
tf
Total gate charge
Qg
Gate-source charge
Qgs
VDS =-10V,VGS =-4.5V,ID =-4A
Gate-drain charge
Qgd
Source-Drain Diode characteristics
Diode Forward voltage Note2
-VDS
VGS =0V, IS=-1A
Notes:1. Surface mounted on FR4 board，t ≤ 10 sec.
2. Pulse Test : Pulse width≦3 00µs, duty cycle≦2 %.
Type
0.65
33
45
63
1450
205
160
9.5
17
94
35
17.2
1.3
4.5
Max
1
±10
1
50
60
90
1
Units
V
µA
µA
V
mΩ
S
pF
ns
nC
V
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Revision：2.0 Jun-2019
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