BR24A01A-WM データシートの表示（PDF） - ROHM Semiconductor
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BR24A01A-WM Datasheet PDF : 32 Pages
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BR24Axxx-WM (1K 2K 4K 8K 16K 32K 64K)
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Ratings
Supply Voltage
VCC
Power Dissipation
Pd
Storage Temperature
Tstg
Operating Temperature Topr
-0.3 to +6.5
0.45 (SOP8)
0.45 (SOP-J8)
0.31 (MSOP8)
-65 to +125
-40 to +105
Terminal Voltage
‐
-0.3 to VCC+1.0
Unit
Remarks
V
When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
W When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.
℃
℃
V
●Memory cell characteristics (VCC=2.5V to 5.5V)
Parameter
Number of data rewrite times *1
Data hold years *1
○Shipment data all address FFh
*1Not 100% TESTED
Min.
1,000,000
100,000
40
10
Limits
Typ.
-
-
-
-
Max
-
-
-
-
●Recommended Operating Ratings
Parameter
Symbol
Power source voltage
VCC
Input voltage
VIN
Ratings
2.5 to 5.5
0 to VCC
Unit
Times
Years
Unit
V
Conditions
Ta≦25℃
Ta≦105℃
Ta≦25℃
Ta≦105℃
●Electrical characteristics (Unless otherwise specified, Ta=-40℃ to +105℃, VCC=2.5V to 5.5V)
Parameter
Symbol
Min.
Limits
Typ.
Max.
Unit
Conditions
“HIGH” input voltage
VIH
0.7 VCC
-
-
V
“LOW” input voltage
VIL
-
-
0.3 VCC
V
“LOW” output voltage 1
VOL
-
-
0.4
V IOL=3.0mA (SDA)
Input leak current
ILI
-1
-
1
μA VIN=0V to VCC
Output leak current
Current consumption
ILO
-1
ICC1
-
ICC2
-
-
1
μA VOUT=0V to VCC, (SDA)
-
2.0 *1
3.0 *2
mA
VCC =5.5V,fSCL=400kHz, tWR=5ms,
Byte write, Page write
-
0.5
mA
VCC =5.5V,fSCL=400kHz
Random read, current read, sequential read
Standby current
ISB
-
-
2.0
μA
VCC =5.5V, SDA・SCL= VCC
A0, A1, A2=GND, WP=GND
*1 BR24A01A/02/04/08/16-WM, *2 BR24A32/64-WM
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TSZ02201-0R1R0G100140-1-2
29.Jan.2018 Rev.003
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