BR24G04-3A(2013) データシートの表示（PDF） - ROHM Semiconductor
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BR24G04-3A Datasheet PDF : 37 Pages
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BR24G04-3A
Datasheet
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Ratings
Supply Voltage
VCC
Power Dissipation
Pd
Storage Temperature
Tstg
Operation Temperature Topr
-0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
330 (TSSOP-B8)
310 (TSSOP-B8J)
310 (MSOP8)
300 (VSON008X2030)
800 (DIP-T8)
－65 to +150
－40 to +85
Input Voltage /
Output Voltage
‐
-0.3 to Vcc+1.0
Junction Temperature
Electrostatic discharge
voltage
(human body model)
Tjmax
VESD
150
-4000 to +4000
Unit
V
mW
℃
℃
V
℃
Remarks
When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.3mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃.
When using at Ta=25℃ or higher 8.0mW to be reduced per 1℃.
The Max value of input voltage / output voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of input voltage
/ output voltage is not under -0.8V.
Junction temperature at the storage condition
V
●Memory Cell Characteristics (Ta=25℃, Vcc=1.6V to 5.5V)
Parameter
Limits
Min. Typ.
Max
Write cycles *1
1,000,000 －
－
Data retention *1
40
－
－
*1Not 100% TESTED
Unit
Times
Years
●Recommended Operating Ratings
Parameter
Symbol
Ratings
Unit
Supply voltage
Input voltage
Vcc
1.6 to 5.5
V
VIN
0 to Vcc
●DC Characteristics (Unless otherwise specified, Ta=-40 to +85℃, Vcc =1.6 to 5.5V)
Parameter
Limits
Symbol
Unit
Min.
Typ.
Max.
Conditions
Input High Voltage1
VIH1
0.7Vcc
－ Vcc+1.0
V
1.7V≦Vcc≦5.5V
Input Low Voltage1
VIL1
－0.3*1
－
0.3Vcc
V
1.7V≦Vcc≦5.5V
Input High Voltage2
VIH2
0.8Vcc
－ Vcc+1.0
V
1.6V≦Vcc＜1.7V
Input Low Voltage2
VIL2
－0.3*1
－
0.2Vcc
V
1.6V≦Vcc＜1.7V
Output Low Voltage1
VOL1
－
－
0.4
V
IOL=3.0mA, 2.5V≦Vcc≦5.5V (SDA)
Output Low Voltage2
Input Leakage Current
Output Leakage Current
VOL2
－
－
0.2
V
IOL=0.7mA, 1.6V≦Vcc＜2.5V (SDA)
ILI
－1
－
1
μA VIN=0 to Vcc
ILO
－1
－
1
μA VOUT=0 to Vcc (SDA)
Supply Current (Write)
ICC1
－
Supply Current (Read)
ICC2
-
Standby Current
ISB
－
*1 When the pulse width is 50ns or less, it is -0.8V.
－
2.0
Vcc=5.5V, fSCL=1MHz, tWR=5ms,
Byte write, Page write
mA Vcc=5.5V, fSCL=1MHz
-
2.0
Random read, current read,
sequential read
－
2.0
μA
Vcc=5.5V, SDA, SCL=Vcc
A0, A1, A2=GND,WP=GND
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