BR24T256FJ-W データシートの表示（PDF） - ROHM Semiconductor
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BR24T256FJ-W Datasheet PDF : 34 Pages
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BR24T256-W
Datasheet
Absolute Maximum Ratings (Ta=25ºC)
Parameter
Symbol
Rating
Supply Voltage
Vcc
-0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
300 (SSOP-B8)
Power Dissipation
Pd
330 (TSSOP-B8)
800 (DIP-T8 (1))
852 (DIP8K)
Storage Temperature Tstg
-65 to +150
Operating Temperature Topr
-40 to +85
Input Voltage /
Output Voltage
-
-0.3 to Vcc+1.0
Junction
Temperature
Tjmax
150
Electrostatic discharge
voltage
(human body model)
VESD
-4000 to +4000
(1) Not Recommended for New Designs. Recommend BR24T256-WZ.
Unit
Remark
V
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 4.5mW/°C when operating above Ta=25°C
mW
Derate by 3.0mW/°C when operating above Ta=25°C
Derate by 3.3mW/°C when operating above Ta=25°C.
Derate by 8.0mW/°C when operating above Ta=25°C
Derate by 8.52mW/°C when operating above Ta=25°C
When mounted (on 114.5 mm × 101.5 mm × 1.6 mm thick, glass
epoxy on single-layer substrate).
°C
°C
The Max value of input voltage / output voltage is not over 6.5V.
V When the pulse width is 50ns or less, the Min value of input voltage
/ output voltage is not lower than -1.0V.
°C Junction temperature at the storage condition
V
Memory Cell Characteristics (Ta=25ºC, Vcc=1.6V to 5.5V)
Parameter
Limit
Min
Typ Max
Write Cycles (1)
1,000,000 -
-
Data Retention (1)
40
-
-
(1) Not 100% TESTED
Unit
Times
Years
Recommended Operating Ratings
Parameter
Symbol
Rating
Unit
Power Source Voltage
Vcc
1.6 to 5.5
Input Voltage
VIN
0 to Vcc
V
DC Characteristics (Unless otherwise specified, Ta=-40ºC to +85ºC, Vcc=1.6V to 5.5V)
Parameter
Limit
Symbol
Unit
Min Typ Max
Conditions
Input High Voltage1
Input Low Voltage1
VIH1 0.7Vcc
VIL1
-0.3(2)
- Vcc+1.0 V 1.7V≤Vcc≤5.5V
- +0.3Vcc V 1.7V≤Vcc≤5.5V
Input High Voltage2
Input Low Voltage2
VIH2 0.8Vcc
VIL2
-0.3(2)
- Vcc+1.0 V 1.6V≤Vcc<1.7V
- +0.2Vcc V 1.6V≤Vcc<1.7V
Output Low Voltage1
VOL1
-
-
0.4
V IOL=3.0mA, 2.5V≤Vcc≤5.5V (SDA)
Output Low Voltage2
VOL2
-
-
0.2
V IOL=0.7mA, 1.6V≤Vcc<2.5V (SDA)
Input Leakage Current
ILI
-1
-
+1
µA VIN=0 to Vcc
Output Leakage Current
Supply Current (Write)
ILO
-1
ICC1
-
Supply Current (Read)
ICC2
-
Standby Current
ISB
-
(2) When the pulse width is 50ns or less, it is -1.0V.
-
+1
µA VOUT=0 to Vcc (SDA)
-
2.5
mA
Vcc=5.5V, fSCL=400kHz, tWR=5ms,
Byte write, Page write
-
0.5
mA
Vcc=5.5V, fSCL=400kHz
Random read, current read, sequential read
-
2.0
µA
Vcc=5.5V, SDA,SCL=Vcc
A0,A1,A2=GND,WP=GND
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TSZ02201-0R2R0G100140-1-2
17.Dec.2018 Rev.004
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