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BR24T1MFJ-3AM データシートの表示(PDF) - ROHM Semiconductor

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BR24T1MFJ-3AM Datasheet PDF : 32 Pages
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BR24T1M-3AM
Datasheet
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Rating
Unit
Remark
Supply Voltage
Vcc
-0.3 to +6.5
V
Storage Temperature
Tstg
-65 to +150
°C
Operating Temperature Topr
-40 to +85
°C
Input Voltage /
Output Voltage
The Max value of Input Voltage/Output Voltage is not over 6.5V.
-0.3 to Vcc+1.0
V When the pulse width is 50ns or less, the Min value Input
Voltage/Output Voltage is not lower than -1.0V.
Junction
Temperature
Tjmax
150
°C Junction temperature at the storage condition
Electrostatic Discharge
Voltage
VESD
-4000 to +4000
V
(Human Body Model)
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Thermal Resistance(Note1)
Parameter
Symbol
Thermal Resistance (Typ)
1s(Note3)
2s2p(Note4)
Unit
SOP-J8
Junction to Ambient
Junction to Top Characterization Parameter(Note2)
SOP8
θJA
149.3
ΨJT
18
76.9
°C/W
11
°C/W
Junction to Ambient
θJA
197.4
109.8
°C/W
Junction to Top Characterization Parameter(Note2)
ΨJT
21
19
°C/W
(Note1)Based on JESD51-2A(Still-Air)
(Note2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note3)Using a PCB board based on JESD51-3.
Layer Number of
Measurement Board
Material
Board Size
Single
FR-4
114.3mm x 76.2mm x 1.57mmt
Top
Copper Pattern
Footprints and Traces
Thickness
70μm
(Note4)Using a PCB board based on JESD51-7.
Layer Number of
Measurement Board
Material
4 Layers
FR-4
Top
Copper Pattern
Footprints and Traces
Thickness
70μm
Board Size
114.3mm x 76.2mm x 1.6mmt
2 Internal Layers
Copper Pattern
Thickness
74.2mm x 74.2mm
35μm
Bottom
Copper Pattern
74.2mm x 74.2mm
Thickness
70μm
Memory Cell Characteristics (Ta=25°C, Vcc=1.7V to 5.5V)
Parameter
Limit
Min Typ Max
Unit
Write Cycles (Note5)
1,000,000 -
-
Times
Data Retention (Note5)
40
-
-
Years
(Note5) Not 100% TESTED
Recommended Operating Ratings
Parameter
Symbol
Rating
Min
Max
Unit
Power Source Voltage
Vcc
1.7
Input Voltage
VIN
0
5.5
Vcc
V
Bypass Capacitor
C
0.1
-
μF
www..rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/28
TSZ02201-0GFG0G100430-1-2
08.Jul.2016 Rev.001

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