BTA312B-800B データシートの表示（PDF） - WeEn Semiconductors
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BTA312B-800B Datasheet PDF : 13 Pages
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WeEn Semiconductors
9. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 15 A; Tj = 25 °C; Fig. 10
VD = 12 V; IT = 0.1 A;Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A;Tj = 125 °C;
Fig. 11
VD = 800 V; Tj = 125 °C
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
dVcom/dt = 20 V/μs; (snubberless
condition); gate open circuit
BTA312B-800B
3Q Hi-Com Triac
Min Typ Max Unit
2
-
50
mA
2
-
50
mA
2
-
50
mA
-
-
60
mA
-
-
90
mA
-
-
60
mA
-
-
60
mA
-
1.3 1.6 V
-
0.8 1
V
0.25 0.4 -
V
-
0.1 0.5 mA
1000 2000 -
V/μs
30
-
-
A/ms
BTA312B-800B
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 April 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
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