BTA316-800C_ データシートの表示（PDF） - NXP Semiconductors.

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BTA316-800C_

3Q Hi-Com Triac

NXP Semiconductors. 

BTA316-800C

3Q Hi-Com Triac

Rev. 02 — 23 November 2010

Product data sheet

1. Product profile

1.1 General description

Planar passivated high commutation three quadrant triac in a SOT78 plastic package

intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.

This "series C" triac will commutate the full rated RMS current at the maximum rated

junction temperature without the aid of a snubber.

1.2 Features and benefits

 3Q technology for improved noise

immunity

 High commutation capability with

maximum false trigger immunity

 High immunity to false turn-on by dV/dt

 High voltage capability

 Planar passivated for voltage

ruggedness and reliability

 Triggering in three quadrants only

1.3 Applications

 Electronic thermostats (heating and

cooling)

 High power motor controls e.g.

washing machines and vacuum

cleaners

 Rectifier-fed DC inductive loads e.g.

DC motors and solenoids

1.4 Quick reference data

Table 1.

Symbol

VDRM

ITSM

IT(RMS)

Quick reference data

Parameter

Conditions

repetitive peak

off-state voltage

non-repetitive

peak on-state

current

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; see Figure 4;

see Figure 5

RMS on-state

current

full sine wave; Tmb ≤ 101 °C;

see Figure 3; see Figure 1;

see Figure 2

Min Typ Max Unit

-

-

800 V

-

-

140 A

-

-

16 A

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